Study of the Electrical Parameters of a Silicon Solar Cell (n+/p/p+) under the Effect of Temperature by Optimization of the Base Thickness and the Doping Rate  

作　　者：Sada Traore Ansoumane Diedhiou Abel Sambou Moussa Camara Sada Traore;Ansoumane Diedhiou;Abel Sambou;Moussa Camara(Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal;Dpartement de Physique-Laboratoire LCPM, Universit Assane SECK-Ziguinchor, Ziguinchor, Senegal)

机构地区：[1]Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal [2]Dpartement de Physique-Laboratoire LCPM, Universit Assane SECK-Ziguinchor, Ziguinchor, Senegal

出　　处：《Journal of Materials Science and Chemical Engineering》2024年第11期15-23,共9页材料科学与化学工程（英文）

摘　　要：In this work, we propose an approach to model the basic parameters of a silicon solar cell (n+/p/p+) by optimizing the doping rate and the thickness of the base using Matlab Simulink. This technique applies to electrical parameters such as the short-circuit current (Jcc) and the open-circuit voltage (Vco). These parameters are mainly related to the variations in the doping rate and the thickness of the solar cell. So, optimizing these parameters could offer the possibility of better taking into account the influence of temperature and improving the quality of the solar cell. This technique consists of determining the optimum thickness and the optimum doping rate. And this allowed us to observe using graphs the behavior of the solar cell under different values of temperature.In this work, we propose an approach to model the basic parameters of a silicon solar cell (n+/p/p+) by optimizing the doping rate and the thickness of the base using Matlab Simulink. This technique applies to electrical parameters such as the short-circuit current (Jcc) and the open-circuit voltage (Vco). These parameters are mainly related to the variations in the doping rate and the thickness of the solar cell. So, optimizing these parameters could offer the possibility of better taking into account the influence of temperature and improving the quality of the solar cell. This technique consists of determining the optimum thickness and the optimum doping rate. And this allowed us to observe using graphs the behavior of the solar cell under different values of temperature.

关 键 词：Solar Cell Doping Rate Temperature Thickness 

分 类 号：TN3[电子电信—物理电子学]