Investigation of Polyaniline Thin Film and Schottky Junction with Aluminium for Electrical and Optical Characterization  

作　　者：Pronob Jyoti Saikia Pratap Chandra Sarmah 

机构地区：[1]Department of Electronics, North-East Institute of Science and Technology, Jorhat, Assam, India

出　　处：《Materials Sciences and Applications》2011年第8期1022-1026,共5页材料科学与应用期刊（英文）

摘　　要：Polyaniline Powdered sample was chemically synthesized using aniline and doped with HCl. Ultra thin film and Schottky junction with Al metal have been fabricated from this powdered sample Ultrathin film of polyaniline shows amorphous nature of the film. Two activation energies of these films at two different temperatures regions within 25-120oC have been observed. Schottky Junction with Al meal shows that the diode ideality factor is much higher than unity. Barrier height of this Schottky junction is estimated to be around 0.61eV. C-V plot of the junction indicates that the carrier concentration is about 1015cm-3. There are various factors found to affect the junction to deviate from ideal Schottky behaviour.Polyaniline Powdered sample was chemically synthesized using aniline and doped with HCl. Ultra thin film and Schottky junction with Al metal have been fabricated from this powdered sample Ultrathin film of polyaniline shows amorphous nature of the film. Two activation energies of these films at two different temperatures regions within 25-120oC have been observed. Schottky Junction with Al meal shows that the diode ideality factor is much higher than unity. Barrier height of this Schottky junction is estimated to be around 0.61eV. C-V plot of the junction indicates that the carrier concentration is about 1015cm-3. There are various factors found to affect the junction to deviate from ideal Schottky behaviour.

关 键 词：ANILINE Activation Energy DIODE IDEALITY Factor BARRIER HEIGHT 

分 类 号：O6[理学—化学]