Thermodynamic Properties of Semiconductors with Defects  

作　　者：Vu Van Hung Le Dai Thanh 

机构地区：[1]不详

出　　处：《Materials Sciences and Applications》2011年第9期1225-1232,共8页材料科学与应用期刊（英文）

摘　　要：Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, CV and CP, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, CV and CP, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.

关 键 词：ANHARMONIC DEFECTIVE SEMICONDUCTOR Statistical MOMENT Method 

分 类 号：O6[理学—化学]