Preparation of Light-Emitting Ytterbium-Doped Tantalum-Oxide Thin Films Using a Simple Co-Sputtering Method  

作　　者：Kenta Miura Kazusa Kano Yuki Arai Osamu Hanaizumi 

机构地区：[1]Graduate School of Science and Technology, Gunma University, Kiryu, Japan

出　　处：《Materials Sciences and Applications》2015年第2期209-213,共5页材料科学与应用期刊（英文）

摘　　要：Light-emitting ytterbium-doped tantalum-oxide thin films were prepared using a simple co-sputtering method for the first time. Sharp photoluminescence peaks having a wavelength of around 980 nm were observed from films annealed from 700&degC to 1000&degC for 10 to 40 min. The strongest intensity of the 980-nm peak was obtained from a film deposited using three ytterbium-oxide pellets and annealed at 800&degC for 20 min. Such rare-earth doped tantalum-oxide sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as both anti-reflection and down-conversion layers for realizing high-efficiency silicon solar cells.Light-emitting ytterbium-doped tantalum-oxide thin films were prepared using a simple co-sputtering method for the first time. Sharp photoluminescence peaks having a wavelength of around 980 nm were observed from films annealed from 700&degC to 1000&degC for 10 to 40 min. The strongest intensity of the 980-nm peak was obtained from a film deposited using three ytterbium-oxide pellets and annealed at 800&degC for 20 min. Such rare-earth doped tantalum-oxide sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as both anti-reflection and down-conversion layers for realizing high-efficiency silicon solar cells.

关 键 词：TANTALUM Oxide YTTERBIUM Co-Sputtering Annealing Photoluminescence 

分 类 号：O48[理学—固体物理]