Direct Structural Evidences of Epitaxial Growth Ge<SUB>1-X</SUB>Mn<SUB>X</SUB>Nanocolumn Bi-Layers on Ge(001)  

作　　者：Thi Giang Le 

机构地区：[1]Hong Duc University, Thanh Hoa City, Vietnam

出　　处：《Materials Sciences and Applications》2015年第6期533-538,共6页材料科学与应用期刊（英文）

摘　　要：Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.Molecular Beam Epitaxy (MBE) system equipped with in-situ Reflection High-Energy Electron Diffraction (RHEED) has been used for (Ge, Mn) thin film growth and monitoring the surface morphology and crystal structure of thin films. Based on the observation of changes in RHEED patterns during nanocolumn growth, we used a real-time control approach to realize multilayer structures that consist of two nanocolumn layers separated by a Ge barrier layer. Transmission Electron Microscopy (TEM) has been used to investigate the structural properties of the GeMn nanocolumns and GeMn/Ge nanocolumns bi-layers samples.

关 键 词：GeMn Diluted Magnetic Semiconductors Muti-Layers GeMn NANOCOLUMNS Thin Film Epitaxial Growth 

分 类 号：O4[理学—物理]