Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor  

作　　者：Olumide Oluwole Akinwunmi Oluwaseun Philip Adelabu Adetokunbo Temitope Famojuro Olakunle A. Akinwumi Priscilla Oluwatumilara Olaopa Kehinde Folorunso Olafisan Ezekiel Oladele Bolarinwa Ajayi Olumide Oluwole Akinwunmi;Oluwaseun Philip Adelabu;Adetokunbo Temitope Famojuro;Olakunle A. Akinwumi;Priscilla Oluwatumilara Olaopa;Kehinde Folorunso Olafisan;Ezekiel Oladele Bolarinwa Ajayi(Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria;Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria)

机构地区：[1]Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria [2]Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria

出　　处：《Materials Sciences and Applications》2022年第8期479-489,共11页材料科学与应用期刊（英文）

摘　　要：A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370°C and 390°C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370°C and 390°C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film.A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370°C and 390°C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370°C and 390°C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film.

关 键 词：Zinc Oxynitride Metal Organic Chemical Vapour Deposition (MOCVD) PRECURSOR Characterisation Thin Film 

分 类 号：TB3[一般工业技术—材料科学与工程]