the National Key Research and Development Program of China(Grant No.2021YFB3601300);the National Natural Science Foundation of China(Grants Nos.52161160334,52271237,12274437,12134017,and 12174426);the Science Center of the National Science Foundation of China(Grant No.52088101);the Beijing Natural Science Foundation(Grant No.Z190009);the K.C.Wong Education Foundation(Grant No.GJTD2019-14)。
Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices.Among them,magnetic tunnel junctions(MTJs)based on A-type antifer...
Supported by the National Basic Research Program of China under Grant No.2010CB934400;the National Natural Science Foundation of China under Grant Nos.10934099,10874225,and 51021061;K.C.Wong Education Foundation,Hong Kong,US-NSF,and Higher Education Commission(HEC)of Pakistan.
After the prediction of the giant electroresistance effect,much work has been carried out to find this effect in practical devices.We demonstrate a novel way to obtain a large electroresistance(ER)effect in the multil...