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Geometric Evolution Laws for Thin Crystalline Films: Modeling and Numerics
《Communications in Computational Physics》2009年第8期433-482,共50页Bo Li John Lowengrub Andreas Ratz Axel Voigt 
The work of B.Li was supported by the US National Science Foundation(NSF)through grants DMS-0451466 and DMS-0811259;the US Department of Energy through grant DE-FG02-05ER25707;the Center for Theoretical Biological Physics through the NSF grants PHY-0216576 and PHY-0822283;J.Lowengrub gratefully acknowledges support from the US National Science Foundation Divisions of Mathematical Sciences(DMS)and Materials Research(DMR);The work of A.Voigt and A.Ratz was supported by the 6th Framework program of EU STRP 016447 and German Science Foundation within the Collaborative Research Program SFB 609.
Geometrical evolution laws are widely used in continuum modeling of surface and interface motion in materials science.In this article,we first give a brief review of various kinds of geometrical evolution laws and the...
关键词：Interface problems geometric evolution laws anisotropy kinetics front tracking LEVEL-SET PHASE-FIELD chemical vapor deposition molecular beam epitaxy liquid phase epitaxy electrodeposition 
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