the Zhejiang Provincial Natural Science Foundation of China (LR21E050001);the Youth Innovation Promotion Association,CAS (2017338);the National Key Basic Research Program of China (973) (2014CB643305);Natural Science Foundation of Ningbo (202003N4357)。
As a semiconductor material with a 2 D-laminate structure, g-C_(3)N_(4)(bandwidth 2.7 e V) has a similar structure and excellent performance to graphene. However, high surface energy and photogenerated e–h recombinat...
Project supported by the National Natural Science Foundation of China (Grant No. 11074025);the National Basic Research Program of China (Grant No. 2011CB922200);the China Academy of Engineering and Physics(‘909’)
On the basis of the growth mechanism of a GaAs/InAs nanoring, we propose a fine model which reflects the confinement details of real nanoring. Through calculations of the two-electron energy and far-infrared (FIR) s...