NON-POLAR

作品数：31被引量：11H指数：2
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相关机构：东南大学更多>>
相关期刊：《Chemical Research in Chinese Universities》《Chinese Physics B》《Green Energy & Environment》《Open Journal of Veterinary Medicine》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划福建省自然科学基金中国博士后科学基金更多>>
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Theoretical analysis of semi/non-polar In GaN/GaN light-emitting diodes grown on silicon substrates
《Chinese Physics B》2015年第7期507-511,共5页于磊 张苑文 李凯 皮辉 刁家声 王幸福 胡文晓 张崇臻 宋伟东 沈岳 李述体 
Project supported by the National Natural Science Foundation of China(Grant No.51172079);the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002);the Science and Technology Program of Guangzhou,China(Grant No.2011J4300018);the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)
A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes（LEDs） with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. ...
关键词：semi/non-polar InGaN/GaN LEDs APSYS Si substrate 
Effect of the thickness of InGaN interlayer on a-plane GaN epilayer
《Chinese Physics B》2015年第2期357-361,共5页王建霞 汪连山 张谦 孟祥岳 杨少延 赵桂娟 李辉杰 魏鸿源 王占国 
supported by the National Natural Science Foundation of China(Grant Nos.91233111,61274041,and 11275228);the Special Funds for Major State Basic Research Project of China(Grant No.2012CB619305);the National High Technology R&D Program of China(Grant Nos.2014AA032603 and2014AA032609);the Guangdong Provincial Special Fund for LED Industrial Development,China(Grant No.2012A080302003)
In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obta...
关键词：non-polar a-plane GaN InGaN interlayer peel-off metalorganic chemical vapor deposition 
Effects of V/III ratio on the growth of a-plane GaN films
《Chinese Physics B》2011年第10期368-372,共5页谢自力 李弋 刘斌 张荣 修向前 陈鹏 郑有炓 
supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900);High Technology Research Program of China (Grant No. 2009AA03A198);the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003);the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal- organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomi...
关键词：V/III ratio a-plane GaN NON-POLAR metal-organic chemical vapour deposition 
Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films
《Chinese Physics B》2010年第1期520-523,共4页赵璐冰 于彤军 吴洁君 杨志坚 张国义 
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028);the National Basic Research Program of China (Grant No. 2007CB307004);the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018)
Non-polar a-plane （1120） GaN films have been grown on r-plane （1102） sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane Ga...
关键词：non-polar GaN V/III ratio ANISOTROPY migration length 
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