Project supported by the National Natural Science Foundation of China(Grant No.51172079);the Science and Technology Program of Guangdong Province,China(Grant Nos.2010B090400456 and 2010A081002002);the Science and Technology Program of Guangzhou,China(Grant No.2011J4300018);the Program for Changjiang Scholars and Innovative Research Team in Universities of China(Grant No.IRT13064)
A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes(LEDs) with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. ...