supported by the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(Grant No.NY221111);the Natural Science Foundation of Jiangsu Province of China(Grant Nos.BK20220397,BK20230359);the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province(Grant Nos.22KJB430038,22KJB510010);the National Natural Science Foundation of China(Grant Nos.62204130,62288102,and62304112);the National Funds for Distinguished Young Scientists(Grant No.61825503)。
Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenario...