Project supported by the Science Challenge Project,China(Grant No.Z2016003);the National Key R&D Program of China(Grant Nos.2016YFB0400803and 2016YFB0401801);the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089);the Beijing Municipal Science and Technology Project,China(Grant No.Z161100002116037)
In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron bloc...