the National Natural Science Foundation of China(Grant Nos.61871431,61971184,and 62001162).
A scheme to improve the quality in ghost imaging(GI)by controlling the bandwidth of light source(BCGI)is proposed.The theoretical and numerical results show that the reconstruction result with high quality can be obta...
supported by the National Natural Science Foundation of China(Grants Nos.62125402 and 92061113)。
With the rapid development of artificial intelligence and machine learning(ML)methods,materials science is rapidly entering the era of data-driven materials informatics.ML models serve as the most crucial component,cl...
supported by the National Natural Science Foundation of China(Grant No.12064013);the Natural Science Foundation of Jiangxi Province,China(Grant No.20202BAB214010);the Open Funds of the State Key Laboratory of Metastable Materials Science and Technology(Grant No.201906);Ganzhou Science and Technology Project(Grant No.202060);the Program of Qingjiang Excellent Young Talents,Jiangxi University of Science and Technology。
Two novel non-isoelectronic with diamond(non-IED)B–C–O phases(tI16-B_(8)C_(6)O_(2)and mP16-B_(8)C_(5)O_(3))have been unmasked.The research of the phonon scattering spectra and the independent elastic constants under...
Project supported by the National Natural Science Foundation of China(Grant Nos.11975131 and 11435005);the K C Wong Magna Fund in Ningbo University。
The Painlevé property for a(2+1)-dimensional Korteweg–de Vries(KdV) extension, the combined KP3(Kadomtsev–Petviashvili) and KP4(cKP3-4), is proved by using Kruskal’s simplification. The truncated Painlevé expansi...
Project supported by the National Key R&D Program of China(Grant Nos.2018YFA0305900 and 2016YFB0201204);the National Natural Science Foundation of China(Grant Nos.51632002,51572108,11574109,91745203,and 11634004);Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT 15R23);National Fund for Fostering Talents of Basic Science,China(Grant No.J1103202)
First-principles evolutionary calculation was performed to search for all probable stable Ga–Te compounds at extreme pressure. In addition to the well-known structures of P6_3/mmc and Fm-3 m Ga Te and I4/m Ga_2 Te_5,...
Project supported by the National Natural Science Foundation of China(Grant Nos.61405080 and 61575086);Jiangsu Collaborative Innovation Centre of Advanced Laser Technology and Emerging Industry,China;the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
The mid-infrared (MIR) luminescent properties of Dy3+ ions in a new chalcohalide glass host, Ga2S3-Sb2S3-CsI, are investigated; and the suitability of the doped glass for MIR fiber lasers is evaluated. The Dy3+-do...
Piezoelectric shunt damping has been widely used in vibration suppression, sound absorption, noise elimination, etc. In such applications, the variant elastic constants of piezoelectric materials are the essential par...
supported by the Special Scientific Research Fund of the Meteorological Public Welfare of the Ministry of Sciences and Technology,China(Grant No.GYHY201406003);the Open Research Fund Program of Plateau Atmosphere and Environment Key Laboratory of Sichuan Province,China(Grant No.PAEKL-2015-K3);the National Natural Science Foundation of China(Grant Nos.41375054,41575064,91437215,41405055 and 41375052)
Considering some simple topological properties of vorticity vector, the frozen-in property of vorticity herein is revis- ited. A vortex line, as is analogous to velocity vector along a streamline, is defined as such a...
Project supported by the National Natural Science Foundation of China(Grant No.61372034)
In this paper, we first propose a metamaterial structure by etching the same two interdigital fingers on the upper ground of quarter mode substrate integrated waveguide(QMSIW). The simulated results show that the pr...
Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA050302);the National Natural Science Foundation of China(Grant No.61306076)
It is studied in this paper that the electrical characteristics of the interface between SiOyNx/SiNx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition tempe...