Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1200700);the National Natural Science Foundation of China(Grant Nos.T2222025 and 62174053);the Open Research Projects of Zhejiang Laboratory(Grant No.2021MD0AB03);the Shanghai Science and Technology Innovation Action Plan(Grant Nos.21JC1402000 and 21520714100);the Guangdong Provincial Key Laboratory Program(Grant No.2021B1212040001);the Fundamental Research Funds for the Central Universities;support from the Zuckerman STEM Leadership Program;Pazy Research Foundation(Grant No.149-2020)。
Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers...