supported by the National Natural Science Foundation of China (Grant No. 12304072);Program for Science and Technology Innovation Team in Zhejiang (Grant No. 2021R01004);Natural Science Foundation of Ningbo(Grant No. 2021J121);supported by the User Experiment Assist System of Shanghai Synchrotron Radiation Facility (SSRF)。
Conventional theories expect that materials under pressure exhibit expanded valence and conduction bands,leading to increased electrical conductivity.Here,we report the electrical properties of the doped 1T-TiS_(2) un...