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Demonstration of synaptic and resistive switching characteristics in W/TiO_(2)/HfO_(2)/TaN memristor crossbar array for bioinspired neuromorphic computing被引量：4: 《Journal of Materials Science & Technology》2022年第1期94-102,共9页Muhammad Ismail Umesh Chand Chandreswar Mahata Jamel Nebhen Sungjun Kim; financially supported in part by a grant(2021R1C1C1004422)of the National Research Foundation(NRF)grant funded by the Korean government(MSIP)。; In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resi...; 关键词：Resistive switching Crossbar-array memristive device Synaptic plasticity TiO_(2)/HfO_(2)film Oxygen vacancy

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