超低功耗CMOS电压基准源技术研究进展  

Research progress of techniques on ultra-low-power CMOS voltage references

作　　者：李思臻[1] 余凯[1] 罗子安 苏钊贤 LI Sizhen;YU Kai;LUO Zian;SU Zhaoxian(School of Integrated Circuits,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学集成电路学院,广州510006

出　　处：《微纳电子与智能制造》2023年第4期6-12,共7页Micro/nano Electronics and Intelligent Manufacturing

基　　金：国家自然科学基金(61804033)项目资助

摘　　要：当前,随着物联网微型设备的发展,电压基准源作为电子设备中集成电路的基本模块,需要在非常有限的电源电压和功率下工作。此外,电压基准源还需要在工艺、电源电压、温度变化时能够提供稳定的输出电压。相比于使用双极型晶体管和大电阻的低功耗带隙电压基准源,CMOS电压基准源仅使用少数MOS器件,可以工作在更低的电源电压,具有更小的面积,并且其功耗可降至皮瓦级别。本文旨在全面回顾和探讨当前主流的超低功耗CMOS电压基准源技术。首先介绍其基本结构,针对超低功耗应用重点介绍自偏置和泄漏偏置结构,分析其工作原理及性能差异。然后,围绕基准电压的工艺偏差,线性灵敏度和温度特性,总结了目前已有的超低功耗CMOS电压基准源技术优化方案。最后,探讨了超低功耗CMOS电压基准源技术面临的挑战。Currently,with the development of micro-devices in the internet of things,voltage reference,as the basic module of integrated circuits in electronic devices,needs to operate at very limited supply voltage and power.In addition,voltage reference also needs to be able to provide a stable output voltage against the variations of process,supply voltage,and temperature.Compared to low-power bandgap voltage reference using bipolar junction transistors and large resistors,CMOS voltage reference using only a few MOS devices can operate at a lower supply voltage,consume a smaller area,and reduce their power consumption to the picowatt level.This paper aims to review and discuss the current mainstream techniques of ultra-low-power CMOS voltage reference.Firstly,the basic structure of CMOS voltage reference is introduced.For the self-biased and leakage-biased structures in the ultra-low-power applications,the working principles and performance differences are analyzed.Then,focusing on the process deviations,line sensitivity and temperature characteristics of the reference voltage,the existing optimization schemes of techniques on ultra-low-power CMOS voltage reference are summarized.Finally,the challenges of technologies about ultra-low-power CMOS voltage reference are discussed.

关 键 词：CMOS电压基准源 自偏置 泄漏偏置 工艺偏差 线性灵敏度 温度特性 

分 类 号：TN311[电子电信—物理电子学]