具有高稳定度的低压带隙基准源  

Low Voltage Bandgap Reference Source with High Stability

作　　者：汪振民 杨光 WANG Zhen-min;YANG Guang(The 14th Research Institute of CETC,Nanjing 210039,China)

机构地区：[1]中国电子科技集团公司第十四研究所,南京210039

出　　处：《微波学报》2020年第S01期246-249,共4页Journal of Microwaves

摘　　要：提出了一种采用0.18μm互补型金属氧化物半导体(CMOS)工艺设计的带隙基准源电路,该电路具有低压输出、高稳定度和高电源抑制比的特点。利用运算放大器的钳位功能,提高带隙基准源的稳定度。电路的仿真结果表明:常温时,基准电压输出为0.496V;在典型工艺角下,-45℃到125℃温度变化范围内,带隙基准源的温度系数约为21.2ppm/℃;1MHz频率范围内,电源抑制比(PSRR)达到80dB。可以广泛运用于高速高精度集成电路模块。A bandgap reference source circuit using 0.18μm complementary metal oxide semiconductor(CMOS)process is presented in the paper,this circuit has low-voltage output,high stability and high power supply rejection ratio(PSRR).Stability of the bandgap reference source is improved by using the clamping function of the operational amplifier.The simulation results for this circuit show that the reference voltage is 0.496 V at normal atmospheric temperature,the temperature coefficient within-45℃to 125℃temperature range is 21.2 ppm/℃at typical corner,the power supply rejection ratio(PSRR)is 80 dB within 1 MHz frequency range.The bandgap reference source discussed in this paper can be widely used in high speed and high precision integrated circuits.

关 键 词：互补型金属氧化物半导体 带隙基准源 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN710