基于InP DHBT的宽带高带宽利用率的ECL静态分频器  

A Broadband High Bandwidth Utilization ECL Static Frequency Divider in InP DHBT process

作　　者：甄文祥 苏永波 丁芃 丁武昌 杨枫 金智 ZHENWen-xiang;SU Yong-bo;DING Peng;DINGWu-chang;YANG Feng;JIN Zhi(High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;School of Electronic.Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中科院微电子所高频高压中心,北京100029 [2]中国科学院大学电子通信学院,北京100049

出　　处：《微波学报》2020年第S01期152-155,共4页Journal of Microwaves

摘　　要：本文提出了一种由0.8μm的InPDHBT工艺制作的宽带2:1静态ECL分频器电路,提出的分频器电路依据双发射极ECL电路结构进行搭建。经过对电路参数的理论分析和相关计算,该电路中关键开关器件的最大截止频率(ft)的利用率提高到了0.967。该电路的测试结果表明,在输入正弦波的射频信号下,电路输入频率的操作频率范围是1GHz到62GHz。该电路搭建利用器件的最大截止频率ft为150GHz,因此电路的带宽利用率BW/ft为0.413,这在相同尺寸器件所制作的分频器电路中,是一个相当良好的结果。This letter presents a broadband 2:1 static ECL frequency divider in a 0.8μm InP DHBT process.The proposed divider is based on an ECL double emitter-followers structure.The maximum cut-off frequency(ft)utilization of the device is improved up to 0.967 through theoretical analysis and calculation.The measurement shows that the divider can operate with input frequency from 1 GHz to 62 GHz in sinusoidal waveform,while the maximum ft of the device is 150 GHz.Bandwidth utilization BW/ft is 0.413,which is an extremely high value for InP devices at the same size.

关 键 词：静态分频器 ECL 双发射极 InP DHBT 带宽利用率 

分 类 号：TN772[电子电信—电路与系统]