一种高维持电压的新型闩锁免疫双向可控硅  

A Novel Latchup-Immune Dual-Directional SCR with High Holding Voltage

作　　者：孙浩楠 李浩亮[1] 杨潇楠[1] SUN Haonan;LI Haoliang;YANG Xiaonan(School of Information Engineering,Zhengzhou University,Zhengzhou 450000,P.R.China)

机构地区：[1]郑州大学信息工程学院,郑州450000

出　　处：《微电子学》2022年第6期1044-1049,共6页Microelectronics

基　　金：国家自然科学基金资助项目(61874099)

摘　　要：传统DDSCR器件过低的维持电压容易造成闩锁效应。提出了一种新型DDSCR,在传统器件阳极与阴极之间加入了浮空高掺杂的N+与P+有源区,通过P+有源区复合阱内的电子,N+有源区将电流通过器件深处电阻较低SCR路径泄放的方式来解决传统器件维持电压过低的问题,提高器件抗闩锁能力。基于TCAD的仿真结果表明,与传统DDSCR相比,新型器件的维持电压从2.9 V提高到10.5 V,通过拉长关键尺寸D7,可将器件维持电压进一步提高到13.7 V。该器件适用于I/O端口存在正负两种电压的芯片防护。The traditional dual-directional SCR(DDSCR)have latch-up effect due to low holding voltage.In this study,a novel DDSCR with a high holding voltage was proposed.The floating and highly doped N+and P+active regions were added between the anode and cathode of the traditional device.The well in the P+active region was recombined with electrons in the well and the N+active region forced the current to bleed through the SCR path of lower resistance deep in the device,then the problem of low holding voltage of the traditional device was solved.Simulation based on TCAD results show that compared with the traditional DDSCR,the holding voltage of the novel device is increased from 2.9 V to 10.5 V.By extending the critical dimension D7,the holding voltage of the device can be further increased to 13.7 V.This device is suitable for chip protection with positive and negative voltages on I/O ports.

关 键 词：静电放电 维持电压 双向可控硅 闩锁效应 TCAD仿真 

分 类 号：TN342[电子电信—物理电子学]