(100)择优取向对0.935Bi1/2Na1/2TiO3-0.065BaTiO3-0.01Al6Bi2O12无铅压电薄膜的结构和性能影响  

Effect of (100) Preferred Orientation on Structure and Properties of 0.935Bi1/2Na1/2TiO3-0.065BaTiO3-0.01Al6Bi2O12 Lead-free Piezoelectric Thin Films

作　　者：范学敏 付鹏[1] 杜鹃[1] 陈冲 李伟[1] 郝继功[1] FAN Xuemin;FU Peng;DU Juan;CHEN Chong;LI Wei;HAO Jigong(College of Materials Science and Engineering,Liaocheng University,Liaocheng 252059,Shandong,China)

机构地区：[1]聊城大学材料科学与工程学院,山东聊城252059

出　　处：《硅酸盐学报》2020年第2期155-160,共6页Journal of The Chinese Ceramic Society

基　　金：国家重点研发计划项目(2016YFB0402701);国家自然科学基金项目(51502127).

摘　　要：通过激光脉冲沉积技术(PLD)在Pt(111)/Ti/SiO2/Si(简称Pt)和具有LaNiO3缓冲层的Pt(111)/Ti/SiO2/Si(简称LNO/Pt)两种衬底上制备了0.935Bi1/2Na1/2TiO3-0.065BaTiO3-0.01Al6Bi2O12(简称BNT–BT–AB)薄膜。利用X射线衍射仪、扫描电子显微镜、原子力显微镜和铁电分析仪等对薄膜的结构和性能进行了测试和表征。结果表明:Pt衬底上BNT–BT–AB薄膜为随机取向,晶粒形貌为立方块状,剩余极化强度2Pr=20.38μC/cm2,介电可调为19%,局部有效压电系数d33*为130 pm/V;LNO/Pt衬底上BNT–BT–AB薄膜呈现高度的(100)择优取向,薄膜表面平整,剩余极化强度2Pr=21.25μC/cm2,介电常数(700)和介电可调性(23%)均大于随机取向薄膜,d33*提高到150 pm/V。0.935Bi1/2Na1/2Ti O3-0.065Ba Ti O3-0.01Al6Bi2O12(BNT-BT-AB)thin films were prepared via pulse laser deposition(PLD)on the substrates of Pt(111)/Ti/Si O2/Si(Pt)and La Ni O3 buffered Pt(111)/Ti/Si O2/Si(LNO/Pt),respectively.The morphology structure and electric properties of the films were investigated by X-ray diffraction,scanning electron microscopy,atomic force microscopy and ferroelectric analysis.The results show that the BNT-BT-AB film deposited on Pt exhibits a random orientation,the morphology of grain is cubic,the remnant polarization 2Pr is 20.38μC/cm2,the dielectric tunability is 19%and the piezoelectric coefficient d*33 is130 pm/V.The BNT-BT-AB film deposited on LNO/Pt has a(100)preferred orientation,the surface morphology is flat,the residual polarization 2Pr is 21.25μC/cm2,and the dielectric constant(700)and dielectric tenability(23%)are greater than those of the BNT-BT-AB film deposited on Pt,and the enhanced piezoelectric coefficient d*33 is 150 pm/V.

关 键 词：压电薄膜 激光脉冲沉积 钛酸铋钠 取向 

分 类 号：TM282[一般工业技术—材料科学与工程]