高组分稀磁半导体Cd_(1 -x)Mn_xTe/CdTe超晶格的光调制反射谱研究  

STUDY OF PHOTOREFLECTANCE SPECTROSCOPY IN SEMICONDUCTOR Cd_1-x Mn_xTe/CdTe SUPERLATTICES WITH HIGH COMPOSITIONS

作　　者：陈辰嘉[1] 王学忠[1] 梁晓甘[1] 李海涛[1] 凌震[2] 王迅[2] V Bellani M Geddo A Stella S Tavazzi A Borghesi A Sassella 

机构地区：[1]北京大学物理系,北京100871 [2]复旦大学应用表面物理实验室,上海200433 [3]INFM-Dipartimento di Fisica"A.Volta"dell’Universitiy di pavia [4]INFM-Dipartimento di Scienza dei Materiali University di Milano Bicocca,milanoitaly20125

出　　处：《红外与毫米波学报》2002年第5期332-336,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金 (批准号 198740 0 5 )资助项目~~

摘　　要：报道用分子束外延 (MEB)技术生长的x =0 4 ,0 8的高组分稀磁半导体Cd1-xMnxTe/CdTe超晶格的光调制反射谱在室温和液氮下的实验结果 .观测到 11H ,2 2H ,33H和 11L等激子跃迁结构 ,计及子能级的量子限定效应和晶格失配导致的应力效应 ,对子能级结构进行了计算 ,除x =0 8样品的 33H能量计算值与实验值有较大偏差外 ,实验结果与理论符合得很好 .还与光致发光谱实验结果进行了比较 .Photoreflectance spectra of Cd 1- x Mn x Te?CdTe superlattices with high compositions x =0.4,0.8 were carried out at room temperature and liquid nitrogen temperature. The samples were grown by molecular beam epitaxy (MBE) technique. Exciton transitions of heavy and light holes related to 11H,22H,33H and 11L were observed. After taking into consideration the strain induced and quantum confinement effects, the theoretical calculations are in very good agreement with our photo reflectance mea...

关 键 词：光调制反射 激子跃迁 应力效应 超晶格 

分 类 号：TN304[电子电信—物理电子学]