用卢瑟福背散射/沟道技术研究MOVCD方法生长的ZnO薄膜的弹性应变  

RBS/Channeling study on elastic strain in ZnO film grown by MOVCD

作　　者：刘玉娟[1] 张斌[2] 王坤[3] 姚淑德[3] 王立[4] 江风益[4] 

机构地区：[1]东华理工大学核工程技术学院,抚州344000 [2]复旦大学现代物理研究所,上海200433 [3]北京大学物理学院,北京100871 [4]南昌大学教育部发光材料与器件工程研究中心,南昌330047

出　　处：《核技术》2007年第8期657-659,共3页Nuclear Techniques

摘　　要：用卢瑟福背散射/沟道(RBS/Channeling)技术研究了在Al2O3(0001)衬底上用MOCVD方法生长的ZnO薄膜的弹性应变。ZnO薄膜的χmin=5.1%,表明其具有非常好的结晶品质。ZnO薄膜的四方畸变为正,表明其在水平方向是拉应变,垂直方向是压应变。弹性应变由界面向表面逐渐释放,其在界面附近最大,在表面处最小。The elastic strain of ZnO film, grown on Al2O3(0001) substrate by MOCVD, was studied by RBS/Channeling. Its χmin is 5.1%, which shows that ZnO film has very high crystal quality. The positive tetragonal distortion indicates that pull strain in the horizontal direction and press strain in the vertical direction happen. The elastic strain is gradually released from interface to surface. In the interface, the elastic strain is the maximum, while in the suface, it is the minimum.

关 键 词：卢瑟福背散射/沟道 ZNO薄膜 结晶品质 四方畸变 

分 类 号：O484.2[理学—固体物理]