氧化铝陶瓷衬底多晶硅薄膜区熔再结晶的研究  

ZONE MELTING RECRYSTALLIZATION OF SILICON THINE FILM ON ALUMINIUM OXIDE CERAMIC SUBSTRATE

作　　者：顾亚华[1] 许颖[2] 叶小琴[1] 李海峰[3] 万之坚[3] 周宏余[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]北京市太阳能研究所,北京100083 [3]清华大学材料工程系,北京100083

出　　处：《太阳能学报》2005年第5期617-620,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金项目(60276032)北京市自然科学基金重点项目(2021010)

摘　　要：采用简化的区熔再结晶工艺,即区熔过程中不采用隔离层和盖帽层结构,直接在陶瓷衬底上制备出高 质量的多晶硅薄膜。实验中给出了用X射线衍射方法得到的晶向图谱和光学显微镜、扫描电子显微镜方法得到 的表面形貌,并采用扩散法和正面引电极的方法初步探索了电池的制备工艺,电池的开路电压达到196mV,短 路电流为200μA。Simplified process of zone melting recrystallization (ZMR) was studied. Heavily P+ doped polyciystalline silicon layers were doped on the low cost A12O3 ceramic substrates by rapid thermal chemical vapor deposition (RTCVD). By means of ZMR method, the silicon films got preferred orientation. The grain of the films was greatly enlarged, which was in the order of tens of micrometer or millimeter for the necessity of solar cells. These results indicated that our method has great potential for photovoltaic appl...

关 键 词：陶瓷 薄膜 RTCVD 区熔再结晶 晶向 

分 类 号：TM914.4[电气工程—电力电子与电力传动]