下一代栅材料—难熔金属  

Next Generation Gate Material—Refractory Metal

作　　者：周华杰[1] 徐秋霞[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第2期398-402,共5页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助(2006CB302704);国家自然科学基金项目资助(60576032)

摘　　要：随着晶体管尺寸的缩小,传统的多晶硅栅存在的多晶硅栅耗尽效应、过高的栅电阻和PMOS管的硼穿透效应成为晶体管尺寸进一步缩小的障碍.而难熔金属栅则被认为是最有希望的替代者.它可以很好的解决多晶硅栅面临的这些问题.本文主要介绍了选择难熔金属栅材料所需考虑的因素以及五种主要的制备工艺,并对比了它们各自的优缺点.With the scaling of transistor,poly-silicon(poly-Si)gate depletion,high gate resistance,and B dopant penetration from doped poly-Si gate to silicon substrate encountered by conventional polysilicon gate become an obstacle for further scaling of transistor.And refractory metal gate is considered to be the most promising candidate.It can commendably resolve these problems to be confronted by polysilicon gate.This paper mainly introduces some factors which have to be considered when selecting refractory metal ...

关 键 词：金属栅 难熔金属 多晶硅栅耗尽效应 硼穿通 

分 类 号：TN304[电子电信—物理电子学]