采用LOCOS隔离的部分耗尽SOI器件的窄沟道效应  

Narrow Channel Effect of PD MOSFETs with LOCOS Isolation

作　　者：宋文斌[1] 许高博[1] 郭天雷[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第5期1535-1538,共4页Chinese Journal of Electron Devices

摘　　要：制备了不同沟宽的采用LOCOS隔离的PDSOI器件,通过实验数据分析器件的窄沟道效应.结果显示,1.2μmSOI器件的窄沟道效应跟体硅相似,主要是由边缘电场效应和"鸟嘴"效应引起的;0.8μmSOI器件的阈值电压随着沟道变窄而减小,出现反向窄沟道效应.我们认为,主要是由于杂质的重新分布降低了沟道边缘的杂质浓度所引起的.PD SOI devices were fabricated using LOCOS process with different channel width.Devices Narrow-Width-Effect is studied through experiment data.The results,from 1.2 μm gate length devices,show a similar trend with conventional Narrow-Width-Effect.The trend is explained through bird beak effect and fringing field.The results,from 0.8 μm gate length devices,show that the threshold voltage decreases as channel width is scaled-down which is so called Inverse-Narrow-Width-Effect.The trend is explained through d...

关 键 词：部分耗SOI 鸟嘴效应 边缘电场效应 反向窄沟道效应 杂质重新分布 

分 类 号：TN402[电子电信—微电子学与固体电子学]