BN纳米管载流子注入的库伦效应  

The coulumb effect on the carrier injection process of BN nanotube

作　　者：黄春晖[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《福州大学学报（自然科学版）》2007年第S1期1-3,共3页Journal of Fuzhou University(Natural Science Edition)

基　　金：福建省自然科学基金资助项目(Z0512003)

摘　　要：以态密度为基础,通过计算系统增加一个电子时,产生的系统能量ΔE变化,以及把BN纳米管看成一个电容入载流子时的库伦效应,得到库伦排斥能,分析库伦排斥对电子输运的影响,研究BN纳米管注入电子的过程.The boron nitride(BN) nanotube has excellent physical behavior,electric stablility.BN nanotubes have been shown to exhibit many interesting properties.In this paper,based on the electronic density,the system enenrgy changed ΔE is calculated when one electron was added to system.Also the coulomb energy was estimated when injection electrons into BN nanotube.It was analyzed that the coulomb exclusive influence in carrier transporting,and the carrier injection process of BN nanotube was studied.

关 键 词：BN纳米管 库仑效应 载流子注入 电子能态 

分 类 号：O481[理学—固体物理]