AlN薄膜的椭圆偏振光谱模型研究  

Study on the fitting model of AlN by ellipsometric spectroscopy

作　　者：姜伟[1] 李书平[1] 刘达艺[1] 康俊勇[1] 

机构地区：[1]福建省半导体材料及应用重点实验室厦门大学物理系,福建厦门361005

出　　处：《福州大学学报（自然科学版）》2007年第S1期11-14,共4页Journal of Fuzhou University(Natural Science Edition)

基　　金："863"计划资助项目(2006AA03A110);基础科研资助项目(A1420060155);国家自然科学基金资助项目(60336020);厦门市科技计划资助项目(3502Z20063001)

摘　　要：采用椭圆偏振光谱对MOCVD生长的AlN薄膜在波长430~850 nm的光学参数进行了测量.通过建立不同的物理和色散模型,分别考察了薄膜表面和界面的椭偏效应.拟合结果表明,AlN薄膜的物理模型在引入表面层后,两类色散模型拟合的数据均与椭偏光谱实验数据吻合得很好.进一步考虑界面层所拟合的结果显示,界面层对Lorentz色散模型的影响较小,并且,其拟合所得AlN薄膜厚度与扫描电镜所测厚度一致,因此,认为仅含表面层的Lorentz色散模型更简单实用.The optical parameters of AlN film,which was grown by MOCVD system,were measured by spectroscopic ellipsometry in the wavelength range of 430~850nm.Through the establishment of different physical and dispersion models,The effects of the surface and interface on spectroscopic ellipsometry were inspected.The results indicate that after the introduction of surface,the fitting data of two dispersion model all have a good agreement with the SE experimental data.Further results of considering the interface layer...

关 键 词：色散模型 椭圆偏振光谱仪 ALN 光学常数 

分 类 号：O484.41[理学—固体物理]