横向SOI锗硅光电探测器的数值模拟  

Numerical Simulation of Lateral SiGe/Si Photodetector Fabricated on SOI

作　　者：莫太山[1] 张世林[1] 郭维廉[1] 郭辉[1] 郑云光[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《半导体光电》2003年第4期242-244,247,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(69836020).

摘　　要：　采用Atlas对SOI/CMOS兼容横向pin近红外锗硅光探测器进行了模拟分析。结果显示,外延应变SiGe层产生禁带变窄,形成了横向的二维空穴势阱沟道。在3V反向偏压下,电场沿横向均匀分布,光吸收层基本完全耗尽,光生载流子得到有效收集;与Si的光电响应相比,出现较明显的响应波长范围向长波长方向扩展、响应峰值波长向长波长方向移动,证实了探测器结构的有效性和其良好的光电性能。The lateral pin near infrared SiGe/Si photodetector made in SOI/CMOS structure is simulated using Atlas. Results show that the epitaxial strained SiGe layer makes band gap narrower and forms a lateral twodimensional hole potential well channel. At a reverse voltage of 3 V, photoabsorption layers are almost fullydepleted, the electric field distributes in lateral direction uniformly and photogenerated carriers are collected efficiently. The photoresponse range and the response peak of the device extend ...

关 键 词：SIGE 近红外光电探测器 器件模拟 

分 类 号：TN364.2[电子电信—物理电子学]