SiGe/Si异质结缺陷的光致发光研究  

Photoluminescence Studies on the Defects of SiGe/Si Heterojunction

作　　者：郭丰[1] 张静[2] 龚敏[1] 刘伦才[2] 杨晨[1] 谭开洲[2] 石瑞英[1] 

机构地区：[1]四川大学物理科学与技术学院微电子学系 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《光散射学报》2007年第3期252-256,共5页The Journal of Light Scattering

基　　金：模拟集成电路国家重点实验室基金项目支持;项目编号:51439040105SC02

摘　　要：本文用光致发光(PL)光谱对Si0.87Ge0.13/Si异质结的缺陷进行了研究。对PL光谱中与SiGe外延层应变驰豫产生的失配位错相关的D-Band进行了分析,发现应变驰豫同时在SiGe层和Si衬底中诱生了位错。由于在PL光谱中观察到了D1而没有观察到D2,因此D1,D2很可能并不对应于相同的位错。通过进一步的分析,我们推测引起SiGe/Si异质结的PL光谱中D-Band的位错的微观结构很可能和Si-Si相关。In this article,Photoluminescence(PL) measurements were performed to monitor the defects of Si0.87Ge0.13/Si heterojunctions.According to the investigation of the well-known D-Band in the PL spectrum which has been associated to the misfit dislocations caused by the strain relaxation of SiGe epitaxial layer,the dislocations were found in both the SiGe epitaxial layer and the Si substrate.Since only the D1 peak was observed in the PL spectra,the defects associated with D1 and D2 may not be the same dislocation.It was speculated that the microstructure of the dislocations which corresponded to the D-Band in the PL spectrum of SiGe/Si heterojunction might mostly be related to the Si-Si bonds.

关 键 词：SIGE/SI异质结 PL光谱 位错 D-Band发光 

分 类 号：O462.3[理学—电子物理学]