GaAsSb /GaAs量子阱激光器结构的发光研究  

LUMINESCENCE PROPERTIES OF GaAsSb/GaAs QUANTUM WELL LASER STRUCTURES

作　　者：江德生 王江波[1] C.Navarro 陈志标 俞水清 S.Chaparro S.Johnson 曹勇 张永航 江德生 梁晓甘[2] 

机构地区：[1]Electrical [2]中国科学院半导体研究所超晶格国家重点实验室,北京100083

出　　处：《红外与毫米波学报》2002年第z1期7-10,共4页Journal of Infrared and Millimeter Waves

基　　金：美国科学基金会(批准号0070125)部分资助项目

摘　　要：研究了ＧａＡｓＳｂ/ＧａＡｓ应变量子阱及应变补偿量子阶激光器结构的光致发光和电注入发光．结果表明,分子束外延生长温度的改变使量子附发光性能发生系统性变化,证明生长温度对量子阱中锑的组分和界面质量具有重要影响．同时,低温光致发光峰的波长随激发功率密度增大发生明显蓝移,具有Ⅱ类量子阱的特点．应变补偿量子阱激光器在波长为１．３μｍ附近激射,阈值电流密度约为１．８ｋＡ/ｃｍ２．The-photoluminescence (PL) and electroluminescence (EL) spectra of GaAsSb/GaAs strained-layer quantum wells (QWs) and strain-compensated QWs were investigated. It was shown that the change in epitaxial growth temperature causes a systematic variation of luminescence properties of QWs, demonstrating the important influences of growth temperature on the Sb content and the interface quality of QWs. The wavelength position of low temperature PL peaks has a large blue shift when the excitation power density increases, exhibiting the feature of type-Ⅱ QWs. The strain-compensated QW lasers start lasing at a threshold current density of 1. 8kA/cm2 at the wavelength near 1. 3μm.

关 键 词：GaAsSb  量子阱 激光 光致发光. 

分 类 号：TN24[电子电信—物理电子学]