碳离子注入前后硅片的微动磨损行为研究  

Research on the Fretting Wear of Silicon Wafers before and after Carbon Ion Implantation

作　　者：吴虎城[1] 张德坤[2] 李伟[1] 陈立奇[2] 

机构地区：[1]中国矿业大学机电工程学院,江苏徐州221116 [2]中国矿业大学材料科学与工程学院,江苏徐州221116

出　　处：《润滑与密封》2008年第4期30-32,共3页Lubrication Engineering

基　　金：国家自然科学基金资助项目(50405042);教育部新世纪优秀人才支持计划项目(NCET-06-0479);江苏省自然科学基金创新人才项目(BK2005403)

摘　　要：利用离子注入技术对单晶硅片表面进行碳离子注入,用原位纳米力学测试系统对碳离子注入前后硅片的纳米硬度和弹性模量进行测定,在UMT-II型微摩擦试验机上对其开展微动磨损试验,利用S-3000N型扫描电镜观察其磨损后的磨痕表面形貌。结果表明,碳离子注入后硅片的纳米硬度增加,弹性模量降低,减摩效果和抗磨性能得到了提高;注入前后硅片的微动磨损机制相似,主要磨损形式为磨粒磨损。The single crystal silicon wafer was implanted by carbon ion.The changes of hardness and elastic modulus of silicon wafers before and after implantation by carbon ion were studied on the in-situ nano-mechanical testing system.The fretting wear tests on silicon wafer and the carbon ion implanted silicon wafer were performed on the UMT-II Tribometer.The morphologies of worn surface were observed with the S-3000N Scanning Electron Microscope.The results demonstrate that the nano-hardness and elastic modulus ar...

关 键 词：单晶硅 离子注入 微动磨损 摩擦因数 

分 类 号：TH117.1[机械工程—机械设计及理论]