PDSOI体源连接环形栅nMOS特性研究  

A Study on Characteristics of PDSOI Round Gate nMOS with Body Tied to Source

作　　者：毕津顺[1] 海潮和[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《固体电子学研究与进展》2008年第1期12-15,共4页Research & Progress of SSE

摘　　要：提出了一种基于部分耗尽绝缘体上硅的体源连接环形栅nMOS器件,并讨论了相应的工艺技术和工作机理。采用体源连接环形栅器件结构,有效地抑制了浮体环形栅器件中存在的浮体效应和寄生双极晶体管效应,使器件性能得到很大的提高。消除了浮体环形栅器件的反常亚阈值斜率和Kink效应,DIBL从120.7mV/V降低到3.45mV/V,关态击穿电压从4.8V提高到12.1V。最后指出,体源连接环形栅器件非常适合于抗辐照加固等应用领域。PDSOI round gate nMOS with body tied to source is proposed.The fabrication process and the operation mechanism are discussed.The floating body effect and parasitic bipolar transistor effect are effectively suppressed in round gate nMOS with body tied to source structure.The device performance is greatly improved by this structure.Abnormal subthreshold voltage phenomena and Kink effect are removed,DIBL is reduced from 120.7 mV/V to 3.45 mV/V and off-state breakdown voltage is increased from 4.8 V to 12.1 V.P...

关 键 词：部分耗尽绝缘体上硅 环形栅 浮体效应 体源连接 

分 类 号：TN386[电子电信—物理电子学]