AlGaAs湿法氧化特性实验研究  

Experimental Study on AlGaAs Wet Oxidation Characteristics

作　　者：曾丽娜[1] 赵英杰[2] 钟景昌[2] 

机构地区：[1]长春理工大学机电工程学院,吉林长春130022 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《大气与环境光学学报》2006年第4期73-76,共4页Journal of Atmospheric and Environmental Optics

摘　　要：研究了AlxGa1-xAs／GaAs材料中高Al组份的AlxGa1-xAs层在400-500℃与水汽发生氧化反应的氧化特性。许多影响因素,如待氧化层厚度、组分、氧化温度、气体流量都不同程度影响氧化速率,影响到氧化物限制工艺的整体质量。实验得到AlxGa1-xAs中x值、厚度、氧化温度等因素与氧化速率有关,并发现气流量对AlxGa1-xAs层的氧化过程有重要的影响,实验测定了气流量与AlxGa1-xAs层氧化速率的关系。The oxidation characteristics of high Al composition AlxGa1-xAs layer contained in the AlxGa1-x As/GaAs materials are researched, by reaction with H2O vapor at temperature 400-500℃. Many factors are related with the procedure of oxidation, such as the Al composition, the thickness of AlxGa1-xAs layer, the reaction temperature and the carrier gas flow. The results show that the oxidation rate of AlxGa1-xAs layer is related to the Al concentration, the thickness of AlxGa1-xAs layer, the reaction temperature a...

关 键 词：氧化物限制 湿法氧化 

分 类 号：TN304[电子电信—物理电子学]