Effects of Buffer Layer on Hetero-Epi-Growth of SiCGe on 6H-SiC  

作　　者：Tan Changxing Chen Zhiming Pu Hongbin Lu Gang Li Lianbi 

机构地区：[1]Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China Department of Electronic Engineering, Xi′an University of Technology, Xi′an 710048, China

出　　处：《Journal of Rare Earths》2006年第z1期19-22,共4页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (60376011 and 60576044) and Specialized Research Fund for the Doctoral Program of High Education (20040700001)

摘　　要：Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and carbon source, respectively, while H2 was employed as the carrier gas. To reduce the heavy lattice mismatch between the film and the substrate, a 3C-SiC buffer layer was inserted between them in a CVD process. Optimizing the growth conditions was discussed. The samples were measured by means of SEM, SAXRD (Small Angle X-Ray Diffraction). It is shown that use of the 3C-SiC buffer layer is an effective way to improve the quality of the ternary alloy.

关 键 词：SiCGe SiC BUFFER LAYER hetero-junction LPCVD 

分 类 号：TN304.2[电子电信—物理电子学]