Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface  

作　　者：Wu Fengmin Lu Hangjun 

机构地区：[1]Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China

出　　处：《Journal of Rare Earths》2006年第z1期23-25,共3页稀土学报（英文版）

基　　金：Project supported by the Natural Science Foundation for Young Scientists of Zhejiang Province (RC02069)

摘　　要：The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influence of the Ehrlich-Schwoebel (ES) barrier on the growth modes and morphologies. It is evident that there exists the ES barrier during multilayer Si thin film growth on Si (111) surface, which is deduced from the incomplete layer-by-layer growth process in the realistic experiments. The ES barrier EB=0.1～0.125 eV is estimated from the three-dimensional (3D) MC simulation and compared with the experimental results.

关 键 词：silicon HOMOEPITAXY KMC SIMULATION ES BARRIER 

分 类 号：O792[理学—晶体学]