HOMOEPITAXY

作品数：4被引量：1H指数：1
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Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template被引量：1
《Chinese Physics B》2014年第1期301-306,共6页李俊泽 陶岳彬 陈志忠 姜显哲 付星星 姜爽 焦倩倩 于彤军 张国义 
Project supported by the National Basic Research Foundation of China （Grant Nos. TG2011CB301905 and TG2012CB619304） and the National Natural Science Foundation of China （Grant Nos. 60876063 and 61076012）.
The high power GaN-based blue light emitting diode(LED) on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition(MOCVD), hydride vapor-pha...
关键词：HOMOEPITAXY strain relaxation metal organic chemical vapor deposition(MOCVD) hydride vapor-phase epitaxy(HVPE) 
STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface
《Chinese Physics B》2010年第10期360-363,共4页徐茂杰 Jeyanthinath Mayandi 王学森 贾金锋 薛其坤 窦晓鸣 
Project supported by the grants from the National University of Singapore (R-144-000-069-101);the SERC of Singapore(R-144-000-088-305)
Pit formation and surface morphological evolution in Si（001） homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunc...
关键词：PIT FACET HOMOEPITAXY Si（O01） 
Transition of Growth Mode in Homoepitaxy on Metal Surface
《Communications in Theoretical Physics》2007年第7期175-178,共4页WU Li-Li LU Hang-Jun WU Feng-Min College of Mathematics and Physics,Information Engineering,Zhejiang Normal University,Jinhua 321004,China 
the Natural Science Foundation for Young Scientists of Zhejiang Province of China under Grant No.RC02069
The process of the multilayer growth of Pt on Pt(111)is studied by using a Monte Carlo model with realisticphysical parameters.The effects of the substrate temperature,the ES barrier,and the deposition rate on the gro...
关键词：growth mode TRANSITION Monte Carlo simulation surface roughness OSCILLATION 
Simulation of Multilayer Silicon Thin Films Growth on Si(111) Surface
《Journal of Rare Earths》2006年第z1期23-25,共3页Wu Fengmin Lu Hangjun 
Project supported by the Natural Science Foundation for Young Scientists of Zhejiang Province (RC02069)
The homoepitaxial growth of multilayer Si thin film on Si(111) surfaces was simulated by Monte Carlo (MC) method with realistic growth model and physical parameters. Special emphasis was placed on revealing the influe...
关键词：silicon HOMOEPITAXY KMC SIMULATION ES BARRIER 
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