STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface  

作　　者：徐茂杰 Jeyanthinath Mayandi 王学森 贾金锋 薛其坤 窦晓鸣 

机构地区：[1]Institute of Optical Engineering, Shanghai Jiao Tong University [2]Department of Physics, National University of Singapore, Lower Kent Ridge Road, 119260, Singapore [3]Department of Physics, Tsinghua University [4]School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology

出　　处：《Chinese Physics B》2010年第10期360-363,共4页中国物理B（英文版）

基　　金：Project supported by the grants from the National University of Singapore (R-144-000-069-101);the SERC of Singapore(R-144-000-088-305)

摘　　要：Pit formation and surface morphological evolution in Si（001） homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched DB steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101）-faceted pits to multi-faceted pits.Pit formation and surface morphological evolution in Si（001） homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched DB steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101）-faceted pits to multi-faceted pits.

关 键 词：PIT FACET HOMOEPITAXY Si（O01） 

分 类 号：TN304.12[电子电信—物理电子学]