ZnO and Zn1-xMnxO Minicrystal by CVT and Temporal Process of Photoelectrons  

作　　者：Dong Guoyi Lin Lin Zhang Xiaojun Wei Zhiren 

机构地区：[1]College of Physics Science and Technology, Hebei University, Baoding 071002, China College of Physics Science and Technology, Hebei University, Baoding 071002, China College of Physics Science and Technology, Hebei University, Baoding 071002, China College of Physics Science and Technology, Hebei University, Baoding 071002, China

出　　处：《Journal of Rare Earths》2006年第z1期37-40,共4页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (50472037); the Natural Science Foundation of Hebei Province (E2004000117 and F2004000130); the Science and Technology Research Program from the Bureau of Science and Technology of Hebei Province (2002158)

摘　　要：The ZnO and Zn1-xMnxO minicrystal were synthesized by chemical vapor transport (CVT). The electron trap structure (donor level) and process on the temporal behavior of photoelectrons of materials were respectively studied by thermo-luminescence and microwave absorption dielectric spectrometry. There are two peaks in the thermo-luminescence spectra in pure ZnO, one is -183 ℃ and the other is -127 ℃, which shows two kinds of electron trap energy level produced by the intrinsic defects in ZnO;but obtain very low thermo-luminescence that only equals to ten percent of pure ZnO in Zn1-xMnxO, which shows that its intensity of electron trap is less. The studies of microwave absorption dielectric spectrometry show that conduction band photoelectrons are two-step exponential decay process in ZnO, the lifetime of rapid process is 83 ns, while slow process is 828 ns, the reason of delay is relaxation effects of electron trap to conduction band photoelectrons. The intensity of electron trap is less in Zn1-xMnxO minicrystal, the relaxation effects of conduction band photoelectrons from electron trap is little, so electrons disappeared quickly at conduction band, and the decay process of photoelectrons is only 10～20 ns.

关 键 词：ZNO chemical vapor transport THERMO-LUMINESCENCE PHOTOELECTRON 

分 类 号：O471.4[理学—半导体物理] TN304[理学—物理]