Si/Nanocrystalline Diamond Film Heterojunction Diodes Preparation  

作　　者：Wu Nanchun Xia Yiben Tan Shouhong Wang Linjun Cui Jiangtao 

机构地区：[1]School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China [2]Shanghai Institute of Ceramics, Chinese Academy of China, Shanghai 200050, China School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China Shanghai Institute of Ceramics, Chinese Academy of China, Shanghai 200050, China School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China

出　　处：《Journal of Rare Earths》2006年第z1期45-48,共4页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (60277024)

摘　　要：With electron assisted hot filament chemical vapor deposition technology, nanocrystalline diamond films were deposited on polished n-(100)Si wafer surface. The deposited films were characterized and observed by Raman spectrum, X-ray diffraction, semiconductor characterization system and Hall effective measurement system. The results show that with EA-HFCVD, not only an undoped nanocrystalline diamond films with high-conductivity (p-type semiconducting) but also a p-n heterojunction diode between the nanocrystalline diamond films and n-Si substrate is fabricated successfully. The p-n heterojunction has smaller forward resistance and bigger positive resistance. The p-n junction effective is evident.

关 键 词：NANOCRYSTALLINE DIAMOND film p-n HETEROJUNCTION DIODE RECTIFICATION characterization EACVD 

分 类 号：O782[理学—晶体学]