Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature  

作　　者：Liu Lili Li Yangxian Ma Qiaoyun Chen Guifeng Sun Yong Yang Shuai 

机构地区：[1]School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China

出　　处：《Journal of Rare Earths》2006年第z1期91-93,共3页稀土学报(英文版)

基　　金：Project supported by the National Nature Science Foundation of China(50472034);the Natural Science Foundation of Hebei Province(E2005000048);Education Ministry Doctoral Program Foundation of China(20050080006)

摘　　要：Fast-neutron irradiated nitrogen-doped Czochralski silicon(NCZ-Si)was annealed at 1100℃for different time,then FTIR and optical microscope were used to study the behavior of oxygen.It is found that[Oi]increase at the early stage then decrease along with the increasing of anneal time.High density induced-defects can be found in the cleavage plane.By comparing NCZ-Si with Czochralski silicon(CZ-Si),[Oi]in NCZ-Si decrease more after anneal 24 h.

关 键 词：nitrogen-doped Czochralski silicon(NCZ-Si) neutron irradiation oxygen precipitation FTIR 

分 类 号：O474[理学—半导体物理]