Nanocrystalline Diamond Films Deposited by Electron Assisted Hot Filament Chemical Vapor Deposition  

作　　者：Wu Nanchun Xia Yiben Tan Shouhong Wang Linjun 

机构地区：[1]School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China [2]Shanghai Institute of Ceramics, Chinese Academy of China, Shanghai 200050, China School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China Shanghai Institute of Ceramics, Chinese Academy of China, Shanghai 200050, China School of Materials Science & Engineering, Shanghai University, Shanghai 200072, China

出　　处：《Journal of Rare Earths》2006年第z1期107-110,共4页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (60277024)

摘　　要：Nanocrystalline diamond films were deposited on polished Si wafer surface with electron assisted hot filament chemical vapor deposition at 1 kPa gas pressure, the deposited films were characterized and observed by Raman spectrum, X-ray diffraction, atomic force microscopy and semiconductor characterization system. The results show that when 8 A bias current is applied for 5 h, the surface roughness decreases to 28.5 nm. After 6 and 8 A bias current are applied for 1 h, and the nanocrystalline films deposition continue for 4 h with 0 A bias current at 1 kPa gas pressure. The nanocrystalline diamond films with 0.5×109 and 1×1010 Ω·cm resistivity respectively are obtained. It is demonstrated that electron bombardment plays an important role of nucleation to deposit diamond films with smooth surface and high resistivity.

关 键 词：NANOCRYSTALLINE DIAMOND film surface ROUGHNESS RESISTIVITY EACVD 

分 类 号：O782[理学—晶体学]