Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal  

作　　者：Shi Xuzhong Yuan Duorong Cheng Xiufeng Guo Shiyi Yu Guangwei Li Zhanfa 

机构地区：[1]State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

出　　处：《Journal of Rare Earths》2006年第z1期197-199,共3页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (50372034)

摘　　要：Single crystals of Ca3NbGa3Si2O14 (CNGS) with ordered Ca3Ga2Ge4O14 (CGG) structure were successfully grown from stoichiometric melts by conventional Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001) facet by atomic force microscopy (AFM). High-resolution X-ray diffraction (HRXRD) results indicate that CNGS crystals have good quality and free low-angle boundaries. The crystals also exhibit good optical quality and high optical transmittance in c-direction.

关 键 词：CZOCHRALSKI method GALLIUM compounds ATOMIC force MICROSCOPY 

分 类 号：O7[理学—晶体学] O43[机械工程—光学工程]