Study of giant magnetoresistance and giant electroresistance of carbon based thin film  

作　　者：ZHANG Xiaozhong TIAN Peng XUE Qingzhong 

机构地区：[1]Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China [2]College of Physics Science and Technology, China University of Petroleum, Dongying 257061, China

出　　处：《Rare Metals》2006年第z1期617-620,共4页稀有金属（英文版）

基　　金：This work was financially supported by the Ministry of Science and Technology of China (No. 2002CB613500) and National Natural Science Foundation of China (No. 50271034, No. 90401013).

摘　　要：Using pulsed laser deposition, Fex-C1-x films on Si (100) substrates were prepared. At T=300 K and B=5 T a large positive MR of 138% was found in Fe0.011-C0.989 film. It is also found that when T<258 K, the MR of Fe0.011-C0.989 film is negative and when 258 K<T<340 K, the MR of the film is positive. The MR of the material is also found to be controlled by the measuring current and measuring voltage. When B=2000 Oe, the MR is 11.5% at 2.5 mA and is 35% at about 35 V. The material has also a giant electroresistance of 500% at 8 V.Using pulsed laser deposition, Fex-C1-x films on Si (100) substrates were prepared. At T=300 K and B=5 T a large positive MR of 138% was found in Fe0.011-C0.989 film. It is also found that when T<258 K, the MR of Fe0.011-C0.989 film is negative and when 258 K<T<340 K, the MR of the film is positive. The MR of the material is also found to be controlled by the measuring current and measuring voltage. When B=2000 Oe, the MR is 11.5% at 2.5 mA and is 35% at about 35 V. The material has also a giant electroresistance of 500% at 8 V.

关 键 词：MAGNETORESISTANCE ELECTRORESISTANCE carbon based film 

分 类 号：TG146.4[一般工业技术—材料科学与工程]