Project supported by the National Natural Science Foundation of China (Grant Nos.11874244 and 11974222)。
Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area...
We gratefully acknowledge the support from the National Natural Science Foundation of China(Grant Nos.11974355 and 12074230);National Key R&D Program of China under Grant No.2017YFA0304203;the Fund for Shanxi“1331 Project”and Shanxi Province 100-Plan Talent Program.Calculations were performed in Center for Computational Science of CASHIPS,the ScGrid of Supercomputing Center and Computer Network Information Center of Chinese Academy of Sciences.
We propose that the double barrier effect is expected to enhance the tunneling electroresistance(TER)in the ferroelectric tunnel junctions(FTJs).To demonstrate the feasibility of this mechanism,we design a model struc...
Project supported by the National Natural Science Foundation of China(Grant No.11674298);the National Key Research and Development Program of China(Grant No.2017YFA0403502);the Users with Excellence Project of Hefei Science Center CAS(Grant No.2018HSC-UE013).
We report an investigation into the magnetoresistance(MR)of La_(0.8)Ba_(0.2)MnO_(3)ultrathin films with various thicknesses.While the 13 nm-thick film shows the commonly reported negative magnetoresistive effect,the 6...
The work at PSU was supported in part by the DOE(Grant No.DE-FG02-08ER4653);the NSF(Grant No.DMR-1411166);The work at USTC was supported by NSFC and NBRPC(2016YFA0300103).
Although the basic concept was proposed only about 10 years ago,multiferroic tunnel junctions(MFTJs)with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interest...
Project supported by the National Natural Science Foundation of China(Grant No.11604010);the Fundamental Research Funds for the Central Universities,China(Grant No.FRF-TP-15-097A1);the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(Grant No.KF201611)
The electroresistance(ER) of La_(0.36)Pr_(0.265)Ca_(0.375)MnO_3(LPCMO) epitaxial thin film was studied under various dc currents.The current effect was compared for the unpatterned film and patterned microbr...
supported by the National Natural Science Foundation of China(Grant No.11274054);the Open Project of Jiangsu Provincial Laboratory of Advanced Functional Materials,China(Grant No.12KFJJ005)
The interface with a pinned dipole within the composite barrier in a ferroelectric tunnel junction(FTJ) with symmetric electrodes is investigated.Different from the detrimental effect of the interface between the el...
supported by the National Basic Research Program of China(Grant Nos.2011CBA00106 and 2014CB921401);the National Natural Science Foundation of China(Grant Nos.11174342,91321208,and 11374344)
Micro-patterning is considered to be a promising way to analyze phase-separated manganites. We investigate resistance in micro-patterned La0.325Pr0.3Ca0.375MnO3 wires with width of 10 μm, which is comparable to the p...
Supported by the National Basic Research Program of China under Grant No.2010CB934400;the National Natural Science Foundation of China under Grant Nos.10934099,10874225,and 51021061;K.C.Wong Education Foundation,Hong Kong,US-NSF,and Higher Education Commission(HEC)of Pakistan.
After the prediction of the giant electroresistance effect,much work has been carried out to find this effect in practical devices.We demonstrate a novel way to obtain a large electroresistance(ER)effect in the multil...
the National Natural Science Foundation of China (Grant No.10774040) and the joint Chinese-Russian Project for their financial supports
Strontium doped perovskite-type Nd0.7Sr0.3MnO3 ceramics were synthesized completely by high-energy ball milling raw oxides of Nd2O3, SrCO3 and MnO2. The optimal ball milling time and mass ratio of milling balls to raw...
Project supported by the National Basic Research Program of China (Grant No. 2007CB925002);the National High Technology Research and Development Program of China (Grant No. 2008AA031401)and Chinese Academy of Sciences
We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stab...