硅PN结基底TiO_2氧传感器的特性研究  

Characteristic of TiO_2 oxygen sensor with silicon PN-junction substrate

作　　者：张辉军[1] 穆长生[1] 王璐[1] 

机构地区：[1]黑龙江大学集成电路重点实验室,哈尔滨150080

出　　处：《仪器仪表学报》2006年第z2期1625-1626,共2页Chinese Journal of Scientific Instrument

基　　金：黑龙江省教育厅基金资助项目(10531129)

摘　　要：采用薄膜工艺及MEMS工艺研制了一种以硅PN结为基底材料的TiO2氧传感器,阐述了该传感器的工作原理、工艺流程及射频磁控溅射制备银电极及TiO2薄膜的方法。利用XRD、SEM分析了薄膜的表面形貌及晶粒结构。基于该结构的氧传感器具有良好的感特性及响应特性,具有响应时间短、信号线性度好、灵敏度高等优点。A new oxygen sensor with PN junction of silicon as the substrate is done. The operation principle, structure design and process of the sensor are described. Ag electrodes and TiO2 thin films are prepared by RF magnetron sputtering process. The microstructure and surface morphology are examined by X-ray diffractometer (XRD) and scanning electron microscopy (SEM) and the oxygen-sensitive characteristic is discussed. The results of the experiment show that the TiO2 oxygen sensor has superior performance.

关 键 词：薄膜 PN结 射频磁控溅射 氧传感器 金红石相 

分 类 号：TH7-55[机械工程—仪器科学与技术]