C、Hf薄膜抑制栅极电子发射的机理研究  

The mechanism of suppressing grid emission using carbon or hafnium thin film

作　　者：吴雪梅[1] 诸葛兰剑[1] 柳襄怀[2] 

机构地区：[1]苏州大学物理系 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料信息》2005年第4期28-30,35,共4页Functional Materials Information

基　　金：国家自然科学基金资助项目(10275047)973重大项目基础研究资助项目(G2000067207-2)

摘　　要：利用双离子束溅射和射频磁控溅射技术在Mo基底上分别制备了C膜和Hf膜,并利用化学方法制备了BaO涂层以模拟行波管栅极结构,随后在N2保护下,通过在900～1300K 范围内退火,研究样品处于高温工作环境下表面相结构和成分的变化,以此解释了C、Hf薄膜抑制栅极电子发射的工作机理。In our experiments,the carbon films and hafnium films were deposited on molybdenum substrates by dual ion beam sputtering and radio frequency magnetron sputtering technology, respectively, and the barium oxide layers were prepared by the chemical method to simulate the grid structure of traveling wave tubes. Then,the surface phase and compositional change in the grid was studied under high temperature by annealing from 900K to 1300K,which can be used in explaining the suppression mechanism of carbon and hafnium film.

关 键 词：栅发射 C薄膜 Hf薄膜 BAO 

分 类 号：TN124[电子电信—物理电子学]