BaSnO_3陶瓷结构及电性能的研究  

Preparation and Electric Characteristics of BaSnO_3 Ceramics

作　　者：王正宇[1] 周方桥[1] 陈志雄[1] 

机构地区：[1]广州大学物理与电子工程学院,广州510405

出　　处：《四川大学学报（自然科学版）》2005年第S1期199-202,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：以BaCO3,SnO2为原料、微量Si O2,Bi2O3,Sb2O3作助烧剂、Ta2O5作施主,采用传统的固相反应法,制备出了相对密度达97%～99%,平均粒径约为8μm的BaSnO3半导体陶瓷.采用Na2CO3和Mn(NO3)2组合作受主掺杂,可有效地增强BaSnO3陶瓷的晶界效应.结果表明Na2CO3和Mn(NO3)2复合掺杂,可以使BaSnO3陶瓷的电阻率显著增大,且晶界电阻远远大于晶粒电阻;Mn(NO3)2掺杂为1mol的BaSnO3陶瓷,电阻率达3.3×106Ωcm,晶粒电阻率为4.3Ωcm,经电导激活能测试,估算出其晶界势垒约为0.5eV.Using BaCO_ 3 and SnO_ 2 as starting materials, a little of SiO_ 2 ,Bi_ 2 O_ 3 and Sb_ 2 O_ 3 as additives and Ta_ 2 O_ 5 as donor, semiconducting BaSnO_ 3 ceramics with 97%-99% of theoretic density and 8μm of average grain size were prepared by solid-state reaction method. The effect of grain boundaries was enhance effectivelyby using Na_ 2 CO_ 3 andMn(NO_ 3 )_ 2 as acceptors. The results indicatedthat the resistivity of BaSnO_ 3 ceramics was increased obviously,and the grain boundary resistance was larger...

关 键 词：BaSnO_3陶瓷 晶粒 晶界 电性能 

分 类 号：TN304[电子电信—物理电子学]