Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure  

作　　者：Liu Zhihong Chen Changchun Lin Huiwang Xiong Xiaoyi Dou Weizhi Tsien Pei-Hsin 

机构地区：[1]Institute of Microelectronics,Tsinghua University,Beijing 100084,China Institute of Microelectronics,Tsinghua University,Beijing 100084,China Institute of Microelectronics,Tsinghua University,Beijing 100084,China Institute of Microelectronics,Tsinghua University,Beijing 100084,China Institute of Microelectronics,Tsinghua University,Beijing 100084,China Institute of Microelectronics,Tsinghua University,Beijing 100084,China

出　　处：《Journal of Rare Earths》2004年第z2期17-20,共4页稀土学报（英文版）

摘　　要：UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.

关 键 词：SIGE/SI photoreflectance UHVCVD 

分 类 号：TG175[金属学及工艺—金属表面处理]